http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007145679-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a9985289fdb607324f7f5e916317f8cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11d05e40924c78e685d633fda269401b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aca005c9044c3ef8b2f74f44dfa11451 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2007-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_123a85d4c83451c79d9e833727ba11e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a46d512027f4dc239ba96651246e47cd |
| publicationDate | 2007-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2007145679-A2 |
| titleOfInvention | Planarization of gan by photoresist technique using an inductively coupled plasma |
| abstract | Films of Ill-nitride for semiconductor device growt are planarized using an etch-back method. The metho includes coating a III-nitride surface having surface roughness features in the micron range with a sacrificial planarization material such as an appropriately chose photoresist. The sacrificial planarization material is then etched together with the Ill-nitride roughness features using dry etch methods such as inductivel coupled plasma reactive ion etching. By closely matchin the etch rates of the sacrificial planarization materia and the III-nitride material, a planarized Ill-nitride surface is achieved. The etch-back process together wit a high temperature annealing process yields a planarize III -nitride surface with surface roughness features reduced to the nm range. Planarized Ill-nitride, e.g., GaN, substrates and devices containing them are als provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011042351-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103342476-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009148671-A2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009148671-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8093082-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8398872-B2 |
| priorityDate | 2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.