| abstract |
Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE- ALD) process. In one embodiment, a process chamber (50) is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber (50) comprises components that are capable of being electrically insulated, electrically grounded or RP energized. In one example, a chamber (50) body and a gas manifold (800) assembly are grounded and separated by electrically insulated components, such as an insulation cap (700), a plasma screen insert (600) and an isolation ring (200). A showerhead (300), a plasma baffle (500) and a water box (400) are positioned between the insulated components and become RF hot when activated by a plasma generator (92). Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber (50). |