| abstract |
There have been such problems in conventional UBMs, such as Cu, Ni and NiP, that the barrier characteristic of the UBM is destroyed due to holding of an electronic component for a long term in a high-temperature status, and bonding strength is deteriorated due to formation of a brittle alloy layer on a bonding interface. Such problems of deterioration of long-term connection reliability of a solder bonding section after high-temperature storage are improved. An electronic component is provided with an electrode pad arranged on a substrate or a semiconductor element, and a barrier metal layer arranged to cover the electrode pad. The barrier metal layer has a CuNi alloy layer, which includes a Cu of 15-60at% and a Ni of 40-85at%, on the side opposite to the side in contact with the electrode pad. |