| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_64ca8009b5daf093db15075fe6d5df8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be62558447df97eceec9aaf3d84fb235
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c9846be686414612dad2e6a4a7123860
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_02d923fcf4f822c641d5200f4f43cebf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c7edf5889c86ba999c55da80488fa7cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd931ca45457a3f9480bb4170b7102f7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66628
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2233
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02576
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02579
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66287 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B23-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D3-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00 |
| filingDate |
2007-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a2391c42cc579bd0f94b7aa413b26fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_213e6855ce19e6d63c5a0559f9fba1a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfbdd87f1ef8749d5948f44beaf5ac79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af92082cdab913e2c9baa87902606e19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35f9f2891494a70a84f5887729446858
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6dae60a04c38be9f2b889dd48b3ad75c |
| publicationDate |
2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007130916-A2 |
| titleOfInvention |
A method of ultra-shallow junction formation using si film alloyed with carbon |
| abstract |
A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950°C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000°C and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030°C and 1050°C. In certain embodiments, a structure having an abrupt p-n junction is provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112376031-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112376031-A |
| priorityDate |
2006-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |