| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b11153cdd643cf426b29317d5738447b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_cd634639faa1275508bdcb810d0b2b6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7442b6cce4e96d3dc4a380851e9224d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7635d1c8947cffd869bd0dd31f282a3c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_991d37c5525578689ef229f7536ce868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_650fcd3e09d9a1f7de9e3bd104843bab |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D7-123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D3-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44 |
| filingDate |
2007-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b39c9d4703792146572ab08e2ff803e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35dea2f22eae16f14cc8a06fc0d6aa12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aea8f07b6ff9a2b54591cdc7daac7374
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34e4cc17c13a1269957248e1bcb2f0be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb6e8404ec57b591c8706e979eed3ed5 |
| publicationDate |
2007-11-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007130710-A1 |
| titleOfInvention |
Copper electrodeposition in microelectronics |
| abstract |
An electrolytic plating method and composition for electrolytically plating Cu onto a semiconductor integrated circuit substrate having submicron-sized interconnect features. The composition comprises a source of Cu ions and a suppressor compound comprising polyether groups. The method involves rapid bottom-up deposition at a superfill speed by which Cu deposition in a vertical direction from the bottoms of the features to the top openings of the features is greater than Cu deposition on the side walls. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2183769-A4 |
| priorityDate |
2006-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |