| abstract |
An organic thin-film transistor which can be fabricated by a simple wet process, and has excellent transistor characteristics, and an excellent stability with time in the air or in a high humidity environment. The organic thin-film in which a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode are provided over a substrate is characterized in that the film density of the organic semiconductor layer is 1.15 to 1.33 g/cm3. |