| abstract |
In a chamber (1) having a shower head (10) and an electrode (8) functioning as a pair of parallel plate electrodes, a wafer (W) provided with a hole having a front diameter of 0.13 μm or less and/or an aspect ratio of 10 or more is arranged. A Ti film is deposited while reducing the amount of ions reaching the bottom of the hole when the plasma is formed by introducing TiCl4 gas, H2 gas and a rare gas having an atomic weight larger than that of Ar gas as a processing gas. |