| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f3f73ee9dfffb376ac2ebcbc3284b380
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ef231351baa05def20ce64651016b642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4c8d3c294092cda66948f45fb89a7b90
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_177e83f89eca20047fb7b5a9cf568ea0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bc11693216ac13f0ee9bed088477b |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2007-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53b57eedbd06f4fde3915e30db9a2a29
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfb129a35298962d5181e09a363e956f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3455cb170486e47ace8c114a826831a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0667d6a2273eac7df312a30e2af56ce7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ad7c448f9ca07caaab4590ecccb6d26 |
| publicationDate |
2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007111779-A3 |
| titleOfInvention |
Method of integrating peald ta-containing films into cu metallization |
| abstract |
A method for forming a modified TaC or TaCN film that may be utilized as a barrier film for Cu metallization. The method includes disposing a substrate in a process chamber of a plasma enhanced atomic layer deposition (PEALD) system configured to perform a PEALD process, depositing a TaC or TaCN film on the substrate using the PEALD process, and modifying the deposited TaC or TaCN film by exposing the deposited TaC or TaCN film to plasma excited hydrogen or atomic hydrogen or a combination thereof in order to remove carbon from at least the plasma exposed portion of the deposited TaCN film. The method further includes forming a metal film on the modified TaCN film, where the modified TaCN film provides stronger adhesion to the metal film than the deposited TaCN film. According to one embodiment, a TaCN film is deposited from alternating exposures of TAIMATA and plasma excited hydrogen. |
| priorityDate |
2006-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |