| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c0853cee6b5801a9093387601157db4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6c80890953bff6f69a8f9ee1ee87a9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1220c5a3f9fa1bf1ec7aa1745206a86 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1876 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C22C1-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 |
| filingDate |
2007-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a81fb610a8dc199899780f47a6530ba8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71a5f31dbce5e4b12d7945404a8f6ee0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a942251cbf1bd51bda39290aba1c603 |
| publicationDate |
2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007101136-A2 |
| titleOfInvention |
High-throughput formation of semiconductor layer by use of chalcogen and inter-metallic material |
| abstract |
A high-throughput method of forming a semiconductor precursor layer by use of a chalcogen-containing vapor is disclosed. In one embodiment, the method comprises forming a precursor material comprising group IB and/or group IDA particles of any shape. The method may include forming a precursor layer of the precursor material over a surface of a substrate. The method may further include heating the particle precursor material in a substantially oxygen- free chalcogen atmosphere to a processing temperature sufficient to react the particles and to release chalcogen from the chalcogenide particles, wherein the chalcogen assumes a liquid form and acts as a flux to improve intermixing of elements to form a group IB-IIIA-chalcogenide film at a desired stoichiometric ratio. The chalcogen atmosphere may provide a partial pressure greater than or equal to the vapor pressure of liquid chalcogen in the precursor layer at the processing temperature. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011163299-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011163299-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101144807-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010232256-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8597973-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8728855-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196767-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011508439-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009076842-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010225829-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2747148-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014052515-A1 |
| priorityDate |
2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |