| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c6c80890953bff6f69a8f9ee1ee87a9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1220c5a3f9fa1bf1ec7aa1745206a86
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c0853cee6b5801a9093387601157db4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1241
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1204
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06 |
| filingDate |
2007-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a81fb610a8dc199899780f47a6530ba8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71a5f31dbce5e4b12d7945404a8f6ee0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a942251cbf1bd51bda39290aba1c603 |
| publicationDate |
2007-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007101099-A2 |
| titleOfInvention |
High-throughput printing of chalcogen layer and the use of an inter-metallic material |
| abstract |
Methods and devices for high-throughput printing of a precursor material for forming a film of a group IB-IIIA- chalcogenide compound are disclosed. In one embodiment, the method comprises forming a precursor layer on a substrate, wherein the precursor layer comprises one or more discrete layers. The layers may include at least a first layer containing one or more group IB elements and two or more different group IDA elements and at least a second layer containing elemental chalcogen particles. The precursor layer may be heated to a temperature sufficient to melt the chalcogen particles and to react the chalcogen particles with the one or more group IB elements and group IDA elements in the precursor layer to form a film of a group IB-IIIA- chalcogenide compound. At least one set of the particles in the precursor layer are inter-metallic particles containing at least one group IB-IIIA inter-metallic alloy phase. The method may also include making a film of group IB-IIIA- chalcogenide compound that includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9640705-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011513992-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9673348-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011023520-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011525297-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2284906-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9378947-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011052206-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2284906-A4 |
| priorityDate |
2006-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |