| abstract |
A semiconductor device (10) and method has interconnects (38, 40, 42) with adjoining reservoir openings (44, 46, 48). A dielectric layer (20) is formed as part of an uppermost of the one or more interconnect layers (18). Openings (30) formed in the dielectric layer result in modified portions (32) of the dielectric layer along portions of sidewalls of the openings. The openings are filled with a conductive material, such as metal. An exposed portion (22) of the dielectric layer (20) is removed to form protruding pads (38, 40, 42) of the conductive material extending above the dielectric layer. Reservoir openings are formed adjacent the protruding pads by removing the modified portions of the dielectric layer. When the semiconductor device is bonded with another device (100), either a wafer or a die, laterally flowing metal collects in the reservoir openings and ensures that a reliable electrical connection is made between the semiconductor device and the other device. |