| abstract |
Disclosed is cerium oxide powder for one -component CMP slurry, which has a specific surface area of 5 m2/g or more, and a ratio of volume fraction of pores with a diameter of 3 ran or more to that of pores with a diameter less than 3 ran of 8:2~2:8. A method for preparing the same, a one-component CMP slurry comprising the same as an abrasive material, and a method of shallow trench isolation using the one-component CMP slurry are also disclosed. The CMP slurry causes no precipitation of the cerium oxide powder even if it is provided as a one-component CMP slurry, because the CMP slurry uses, as an abrasive material, cerium oxide powder that is obtained via a low-temperature calcination step, optionally a pulverization step, and a high-temperature calcination step and has a high pore fraction and low strength. Also, the one- component CMP slurry provides a significantly decreased polishing rate to a silicon nitride layer and an increased polishing selectivity of silicon oxide layer/silicon nitride layer, and shows uniform polishing quality. Particularly, the one-component CMP slurry provides a high polishing selectivity of silicon oxide layer/silicon nitride layer of 20:1 or more, even in the absence of a separate additive or an excessive amount (10 parts by weight or more based on 100 parts by weight of cerium oxide powder) of a dispersant. Further, the one-component CMP slurry minimizes generation of microscratch during a polishing process, and can provide an improved reliability and productivity when applied to a very large scale integrated semiconductor fabricating process requiring a fine pattern. |