| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d056b7a3042f01cff39feda5d04fd17b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8237193bd5e8e27553614337c9868d13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48 |
| filingDate |
2006-08-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2837386aa1813481093c14953c2e467
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4732b08e21513e52e4edc52ae41e8ffb |
| publicationDate |
2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007024665-A1 |
| titleOfInvention |
Single crystal based through the wafer connections |
| abstract |
A through-the-wafer (TTW) electrically conductive connection can be produced in a heavily doped substrate. An annular trench is created from one side of the wafer such that the trench almost reaches the second side of the wafer. The annular trench can be filled with an electrically insulating material. Alternatively, an electrically insulating layer can be produced on the sides of the trench which is then filled with any material. After filling the trench, the bottom of the substrate is ground to expose the trench bottom and the front side is polished to expose the trench top. The plug of substrate material inside the annular trench is a TTW electrical connection. |
| priorityDate |
2005-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |