Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9414eb8baa5e3ff1d70c9b21b4cdb1ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_889c41ad4c4d6b760385b084de9afa4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fedc7ef6c70451408bb8fb548fc0c7f5 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B31-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D11-00 |
filingDate |
2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6da43dec95b399e4e70c7769ae43b9a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aafba41a878378bbb1e2d9aa8e83912c |
publicationDate |
2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
WO-2007023362-A1 |
titleOfInvention |
Doping of particulate semiconductor materials |
abstract |
ABSTRACT The invention relates to a method of doping semiconductor material. Essentially, the method comprises mixing a quantity of particulate semiconductor material with an ionic salt or a preparation of ionic salts. Preferably, the particulate semiconductor material comprises nanoparticles with a size in the range 1nm to 100µm. Most preferably, the particle size is in the range from 50nm to 500nm. Preferred semiconductor materials are intrinsic and metallurgical grade silicon. The invention extends to a printable composition comprising the doped semiconductor material as well as a binder and a solvent. The invention also extends to a semiconductor device formed from layers of the printable composition having p and n type properties. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8623951-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9199435-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9448331-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9175174-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9000083-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8632702-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8568684-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8895962-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9006720-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9320145-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8435477-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9475695-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9029180-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399878-B2 |
priorityDate |
2005-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |