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filingDate 2006-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2007-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2007023362-A1
titleOfInvention Doping of particulate semiconductor materials
abstract ABSTRACT The invention relates to a method of doping semiconductor material. Essentially, the method comprises mixing a quantity of particulate semiconductor material with an ionic salt or a preparation of ionic salts. Preferably, the particulate semiconductor material comprises nanoparticles with a size in the range 1nm to 100µm. Most preferably, the particle size is in the range from 50nm to 500nm. Preferred semiconductor materials are intrinsic and metallurgical grade silicon. The invention extends to a printable composition comprising the doped semiconductor material as well as a binder and a solvent. The invention also extends to a semiconductor device formed from layers of the printable composition having p and n type properties.
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