| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_065209e60510e766569af507b78757db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1f9fa1f18e3183524b9dff28d3c1d76c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ee8e72fec243534bf18d7ea53d49a927 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H2240-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C2201-0132
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2203-0353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H2245-40 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05H1-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00476
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C99-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-427
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 |
| filingDate |
2006-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f18fa1988b63d0f14114293f776ca54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94bd9634ffa535bdb14d37eeebcc6938 |
| publicationDate |
2007-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007021855-A2 |
| titleOfInvention |
Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes |
| abstract |
A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspect Height-to-Width and Width-to-Height ratio holes that can include trenches, having relatively large aspect ratios for removal of polymers used in connection with the manufacturing of microstructures. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009046472-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8045307-B2 |
| priorityDate |
2005-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |