| abstract |
Coated substrates (100) containing first barrier layer (102) comprising hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm 3 and at least two alternating buffer (104) and on the first barrier layer (102) wherein each alternating buffer layer (104) comprises hydrogenated silicon oxycarbide having a density less than 1.6 g/cm 3, and each alternating barrier layer (106) is indepenently selected from hydrogenated silicon oxycarbide having a density of at least 1.6 g/cm3, aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride, provided at least one alternating barrier layer (106) is selected from aluminum, aluminum oxide, aluminum nitride, aluminum oxynitride, titanium, titanium oxide, titanium nitride, and titanium oxynitride. |