| abstract |
This invention provides a polishing pad, which can simultaneously solve problems such as the occurrence of scratches, a variation or a deterioration in polishing rate, a large variation of a polishing amount within a wafer plane, excess consumption of polishing slurry, and an impossibility to hold proper slurry between a polishing object and the polishing pad, is particularly useful for maintaining the polishing rate at a proper value and for improving the in-plane homogeneity of the polishing object after polishing, and is productively very useful, e.g., for chemical mechanical polishing of semiconductor wafers and the like, and a process for producing the same. The polishing pad is formed of a polyurethane foam having a groove in the polishing face. The surface roughness (Ra) of the groove formed face, i.e., the side face and bottom face of the groove, is not more than 10. The process for producing a polishing pad comprises the step of changing the feed speed and the feed rate of a grooving blade stepwise to form, in the polishing face, a concentrically circular groove which is rectangular in section. |