| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_35c6214f837f94bc3e73c562661f279c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81e71f6152b76afccb54556ab81d9b82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c0e3687553467f6b262e5c974ef315c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1b0a437a50eb5ef57947887d1225544c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5033f2dacaf1e053b7947282634a04c2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-77 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K19-202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-10 |
| filingDate |
2006-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ad62646038018967433e26453d197ae0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f246d475279fc8447a48d687da9f4000
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0276023de2f5c2a22ae7383cbb0849fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_80c66a39d4387c329864072c4b3d9daf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56c4da5ab4b3422330cae9980c8bda91 |
| publicationDate |
2006-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2006118294-A1 |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
It is an object of the present invention to provide a technique in which a high-performance and highly reliable semiconductor device can be manufactured at low cost with high yield. A memory device according to the present invention has a first conductive layer including a plurality of insulators, an organic compound layer over the first conductive layer including the insulators, and a second conductive layer over the organic compound layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008065558-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9991265-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10553589-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11456296-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9349735-B2 |
| priorityDate |
2005-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |