| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_57dd4119e913199eed881b1f74fc51e6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2062759e7aef29a21c8f7da746225472
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6839575c19285c3870c5c18440381e03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a819eda0adf22936a52362eeebb9fb4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_16d57b4c78b4e3a63ad872033400aa24 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30612 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B44C1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2006-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9d32a1c0327bff2aae6f9a943db546d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1c74f8dcb2db9f8ba8968a5e5103d2dd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15329e2f508b661df4f647a7582e730d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1392500d5d7c4bb7eeb05da09e63470 |
| publicationDate |
2006-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2006113443-A2 |
| titleOfInvention |
Etching technique for the fabrication of thin (ai, in, ga)n layers |
| abstract |
An etching technique for the fabrication of thin (Al, In, Ga)N layers. A suitable template or substrate is selected and implanted with foreign ions over a desired area to create ion implanted material. A regrowth of a device structure is then performed on the implanted template or substrate. The top growth surface of the template is bonded to a carrier wafer to created a bonded template/carrier wafer structure. The substrate is removed, as is any residual material, to expose the ion implanted material. The ion implanted material on the bonded template/carrier wafer structure is then exposed to a suitable etchant for a sufficient time to remove the ion implanted material. |
| priorityDate |
2005-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |