http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006110871-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0e433c1625fc509a087c912b440da84b http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_245777d210d5f9214f8136cd3927a49a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ef213e085478dd0d6b7cfb7a895f734 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5228 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2006-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2e1d7e57b470a8de49b5386fd9c7e18c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b4c3ad2e2aa6b0ed108b9253f6b866c |
| publicationDate | 2006-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2006110871-A1 |
| titleOfInvention | Thin film resistor head structure and method for reducing head resistivity variance |
| abstract | A method of making an integrated circuit thin film resistor includes forming a first dielectric layer (18B) over a substrate and providing a structure to reduce variation of head resistivity thereof by forming a dummy fill layer (9A) on the first dielectric layer, and forming a second dielectric layer (18D) over the first dummy fill layer. A thin film resistor (2) is formed on the second dielectric layer (18D). A first inter-level dielectric layer (21A) is formed on the thin film resistor and the second dielectric layer. A first metal layer (22A) is formed on the first inter-level dielectric layer and electrically contacts a portion of the thin film resistor. Preferably, the first dummy fill layer is formed as a repetitive pattern of sections such that the repetitive pattern is symmetrically aligned with respect to multiple edges of the thin-film resistor (2). Preferably, the first dummy fill layer is formed so as to extend sufficiently far beyond ends of the thin-film resistor to ensure only a negligible amount of systematic resistance error due to misalignment. |
| priorityDate | 2005-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.