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publicationDate 2006-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2006105077-A2
titleOfInvention Low voltage thin film transistor with high-k dielectric material
abstract A thin film transistor (TFT) includes a source electrode, a drain electrode, and a gate electrode. A gate insulator is coupled to the source electrode, drain electrode, and gate electrode. The gate insulator includes room temperature deposited high-K materials so as to allow said thin film transistor to operate at low operating voltage.
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