| abstract |
Disclosed is a nonvolatile semiconductor storage comprising a capacitor (32) having a first electrode (26) formed on a substrate (10), a single crystal ferroelectric layer (28) formed on the first electrode, and a second electrode (30) formed on the ferroelectric layer. Since an extremely stable single crystal ferroelectric material is used as the material for the ferroelectric layer (28) of the capacitor (32), the capacitor (32) hardly deteriorates even when polarization reversals are repeated. Consequently, there can be obtained a nonvolatile semiconductor storage having a very long life. In addition, an extremely high remanent polarization (Pr) can be obtained since a single crystal ferroelectric material is used as the material for the ferroelectric layer (28) of the capacitor (32). Consequently, a sufficiently large signal can be obtained even when the capacitor (32) is miniaturized, thereby enabling to obtain a nonvolatile semiconductor storage with a high degree of integration. |