| abstract |
This invention relates to a method of manufacturing a semiconductor device. In this method, a semiconductor device is provided comprising a substrate (10), the substrate (10) being covered with a low-k precursor layer (20) having a surface (25). After this step, a partial curing step is performed in which a dense layer (30) is formed at or near the surface (25) of a low-k precursor layer (20). This dense layer (30) can act as a protective layer (30). The low-k precursor material (20) is chosen from a group of materials having the property that they are applicable in a non-cured or partially cured state. The main advantage of this method is that no separate protective layer (30) needs to be provided to the low-k precursor layer (20), because the dense layer (30) is formed out of the low-k precursor layer (20) itself. The dense layer (30) therefore has a good adhesion to the low-k precursor layer (20). |