http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006078408-A2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f5874823d8644a974ac178079204698 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4b61ea5f7769b170ad81bf5711e7e948 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-905 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2218-33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C2217-228 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-23 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4405 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C03C17-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C25-68 |
| filingDate | 2005-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e8488aaf3cfc9cb6191cc8a3359fc7bb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ae827520545422f751dae35ff5c1356a |
| publicationDate | 2006-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2006078408-A2 |
| titleOfInvention | Method and control system for treating a hafnium-based dielectric processing system |
| abstract | A method and control system for treating a hafnium-based dielectric processing system (23) in which a system component of the processing system is exposed to a chlorine-containing gas (94). A residual hafnium by-product remaining in the processing system after a hafnium removal process is reacted with a chlorine- containing etchant derived from the chlorine-containing gas. A chlorinated hafnium product is volatilized for exhaustion from the processing system (23). The control system (90) can utilize a computer readable medium (1208) to introduce a chlorine-containing gas to the processing system, to adjust at least one of a temperature and a pressure in the processing system to produce from the chlorine-containing gas a chlorine-containing etchant (94) for dissolution of a residual hafnium by-product remaining in the processing system after a hafnium silicate, hafnium oxide, or hafnium oxynitride removal process and to exhaust a chlorinated hafnium product from the processing system 23). |
| priorityDate | 2005-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 60.