| abstract |
Provided are a member for a semiconductor device which can have a high quality plating layer formed thereon, exhibits a heat conductivity of 180 W/m·K or higher at a high temperature (100°C), has such a degree of toughness that does not cause a crack due to screwing or the like, does not cause a solder crack due to heat stress even when it is joined to another member by soldering, and can be manufactured at a low cost; and a method for manufacturing the semiconductor member. A member (1) for a semiconductor device, which has a substrate (11) comprising an aluminum-silicon carbide composite material, which exhibits a coefficient of thermal expansion of 6.5 × 10-6/K to 15 × 10-6/K and a heat conductivity of 180 W/m·K or higher at a temperature of 100°C, comprises aluminum or an aluminum alloy and, being dispersed therein, a particulate silicon carbide, has a content of silicon carbide of 30 to 85 mass %, and has started from a powdered material, and surface layers (12) comprising aluminum or an aluminum alloy which are bound to an upper and under surfaces of the substrate (11) and has started from a material solidified from a molten state. |