http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006062350-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3af53387caa51fb0f838ae7133bc879 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bccd7d13d75b2f2db0ce0d506ba8f067 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_236e0920c5704f41214bd63d3e1a1e1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b2b31f8612f522a744762d83c23879ba http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_363d1bdd637155f04df9ea8810640d12 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-81 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-80 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 |
| filingDate | 2005-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e99e79691b312c77455a984029eb2558 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d89d452ee2f4085cdd779786693f4e06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e73318d965f679b996d8c93ac38eb35e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4cf02213d39f4855804ca564c93e8eb |
| publicationDate | 2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2006062350-A1 |
| titleOfInvention | Light emitting diode and method of fabricating the same |
| abstract | Provided are a light emitting diode and a method of fabricating the same. In an inorganic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on an upper doping layer which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the upper doping layer and the transparent electrode. In an organic light emitting diode, at least one layer selected from a group consisting of an oxide layer, a nitride layer, and a metal layer is formed on a plastic substrate which is in contact with a transparent electrode, and the plasma treatment is performed on the resultant structure to form a plasma etching layer, thereby enhancing adhesion between the substrate and the transparent electrode. As a result, the adhesion between the substrate and the transparent electrode or between the upper doping layer and the transparent electrode is enhanced and the layer separation from the transparent electrode is prevented, thereby improving efficiency of the light emitting diode and increasing the production yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105849926-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015097209-A1 |
| priorityDate | 2004-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 58.