| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a162b65402a9a79580e3ae31dcbf3fa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_048534de4cb63e5d6b6c02d7e071dcb0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae8314580a4f5a7c302bb5029cd1a2fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7092e5a9e8f3e6746cc18642b6d62a3a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-31616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-84 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-20 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2005-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b00e200998624045443243557dfc25ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb7333cecc67b56acafa71d24bfa16ae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b794e0ced5c4e9757a7eda86b7e89e07 |
| publicationDate |
2006-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2006062099-A1 |
| titleOfInvention |
Reflective photomask blank, reflective photomask, and method for manufacturing semiconductor device using same |
| abstract |
It is aimed to improve the accuracy of testing when a pattern of a reflective photomask used for EUV lithography is examined by observing the reflectance contrast of a DUV light. Specifically disclosed is a reflective photomask blank wherein a multilayer reflective film (2) and a light absorptive laminate (4) are arranged on a substrate (1). The light absorptive laminate (4) is composed of a first light absorptive layer (41) with EUV light absorbing ability which contains tantalum and silicon, and a second light absorptive layer (42) with DUV light absorbing ability which is arranged on the first absorptive layer (41) and contains tantalum, silicon and at least one of nitrogen and oxygen. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021167878-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008072127-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008078551-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7006078-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2019035929-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7226384-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009136564-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5711533-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2014042056-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008277397-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006228767-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I472872-B |
| priorityDate |
2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |