| abstract |
A method has been developed of synthesizing Y-SWNTs with controlled density, position, and growth direction. The process includes patterning a substrate with a solvent solution of catalyst metal ions, dopant metal ions and metal oxide ions, having in a molar ratio of catalyst to dopant in the range of 0.1 to 0.5 moles of catalyst metal per mole of dopant metal, prior to heating to 600-1200°C with a flow of hydrocarbon gas. A Y-SWNT can be used as a building component of nanoscale two- and three-terminal electronic devices, such as interconnects, diodes, and transistors. This development has a profound impact on nanoscale semiconductor industry, since it is certain that the market share of nanoscale devices using Y-SWNTs will be increased to a great extent. |