| abstract |
At least an SiGe layer is epitaxially grown on a surface of a silicon single crystal wafer, which is to be a bond wafer, at least hydrogen ions or rare gas ions are implanted through the SiGe layer, and an ion implanted layer is formed in the bond wafer. The surface of the SiGe layer and the surface of a base wafer are brought into a close contact and bonded through an insulating film, then, peeling is performed by the ion implanted layer, and an Si layer of the peeled layer transferred onto the base wafer side by the peeling is removed to expose the SiGe layer. Then, heat treatment for condensing Ge under oxidizing atmosphere and/or heat treatment for modifying lattice distortion under non-oxidizing atmosphere is performed to the exposed SiGe layer. Thus, a method for manufacturing the semiconductor wafer provided with the SiGe layer to which lattice modification is sufficiently performed and that having suppressed surface roughness and excellent crystallinity is provided. |