http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006034906-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_715b88847b98f9ff3496076588b3f39b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_347be5276f3a05f06e0f6291f6a06525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f99c9a1a49718b427374e996bfd0a06
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-435
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-0256
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2291-0426
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N29-2437
filingDate 2005-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3badfd24816750982a2a0e7ef24a4201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_950807fea763fe3c0a75cc4f26796bc9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c8be6c74cbbf2655f68241f4299ec91
publicationDate 2006-04-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2006034906-A1
titleOfInvention Piezo-acoustic thin film resonator having a crystalline zinc oxide layer
abstract The invention relates to a capacitor structure (1) comprising a lower electrode layer (5) disposed on a substrate (3), an upper electrode layer (6) and a crystalline zinc oxide-containing dielectric layer (2) interposed between the electrode layers. The capacitor structure is characterized in that an amorphous dielectric intermediate layer (4) is interposed between the lower electrode layer and the crystalline zinc oxide-containing dielectric layer. The invention also relates to a method for producing the aforementioned capacitor structure. Said method comprises the following steps: a) providing the substrate, b) producing the lower electrode layer on a substrate surface of the substrate, c) producing the amorphous intermediate layer on the lower electrode layer, d) producing the crystalline zinc oxide-containing dielectric layer on the intermediate layer, and e) producing the upper electrode layer on the crystalline zinc oxide-containing dielectric layer. The amorphous dielectric layer is adapted to produce during deposition of the zinc oxide an electrical field which is tipped in relation to the normal to the surface of the substrate surface or the lower electrode layer. The zinc oxide monocrystals therefore grow at an angle, thereby providing a crystalline dielectric layer that can be induced to shear vibrations. The inventive capacitor structures are used as piezo-acoustic resonators (10) which are used for detecting the substance of a fluid (13), especially of a liquid (e.g. as biosensor).
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8203255-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102006042724-A1
priorityDate 2004-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004017063-A2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID226399547
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID226405879
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5054
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID1318

Total number of triples: 26.