| abstract |
This invention relates to a chemical transformation of the bridging organic groups in metal oxide materials containing bridging organic groups, such as bridged organosilicas, wherein such a transformation greatly benefits properties for low dielectric constant (k) applications. A thermal treatment at specific temperatures is shown to cause a transformation of the organic groups from a bridging to a terminal configuration, which consumes polar hydroxyl groups. The transformation causes k to decrease, and the hydrophobicity to increase (through ‘self-hydrophobization’). As a result of the bridge-terminal transformation, porous organosilica films are shown to have k < 2.0, E > 6 GPa, do not require additional chemical surface treatment for dehydroxylation (hydrophobicity). |