| abstract |
A process for producing a nitride compound semiconductor represented by a general formula, InxGayAlzN (where x + y + Z = 1, 0 ≤ x ≤ 1, 0 ≤ y ≤ 1, and 0 ≤ z ≤ 1), characterized in that a non-doped nitride compound semiconductor (A) represented by a general formula, InaGabAlcN (where a + b + c = 1, 0 ≤ a ≤ 1, 0 ≤ b ≤ 1, and 0 ≤ c ≤ 1) of a thickness of 500 to 5000 Å is formed between a p-type contact layer and an n-type contact layer at a temperature within a range between 550 and 850ºC. |