| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ff205713a5e89c50a63ae606ce06504
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1ab0947d66370d3a49ea2b47eb74050c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-1135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K77-111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-46 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 |
| filingDate |
2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3eabd82a39ce61ce77eeec9e6bbc1b6 |
| publicationDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005122233-A1 |
| titleOfInvention |
Shot key gate organic field effect transistor and manufacturing method thereof |
| abstract |
There is provided a high-speed shot key gate organic field effect transistor of simple structure. A source, a channel, and a drain are formed by a single organic conductive material and the source, the channel, and the drain are continuous in the organic conductive body. A gate electrode operating as a metal gate is arranged on one surface of the organic conductive body. The shot key bonding between the gate electrode and the organic conductive body constitutes a shot key wall. The range overlapped with the shot key bonding is a channel range. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8569746-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009031525-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5333221-B2 |
| priorityDate |
2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |