| abstract |
Disclosed is a solution raw material for organic metal chemical vapor deposition having high film-forming characteristics and excellent step coverage. Also disclosed is a complex oxide dielectric thin film formed by using such a raw material. Specifically, an improved solution raw material for organic metal chemical vapor deposition obtained by dissolving one or more organic metal compounds in an organic solvent is disclosed which is characterized in that the organic solvent is 1,3-dioxolane or a mixed solvent obtained by mixing a first solvent composed of 1,3-dioxolane and a second solvent composed of one or more solvents selected from the group consisting of alcohols, alkanes, esters, aromatic series, alkyl ethers and ketones. |