| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_db14a387a9f0ca728ada992078d552a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_20df4e28322b4541a7033b852cb9d913
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a34d7d2e0d09a58cb7bf4a04c81162e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_793f9e3c047620f165b4f70e5e3087a5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-122
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1212 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate |
2005-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3706734cb1e930402c88fa08cc872214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35d361b94058ea0e6600312c4e726829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d85c6cee30a9496fc9fb188258b8cc5d |
| publicationDate |
2005-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005114707-A2 |
| titleOfInvention |
Materials suitable for shallow trench isolation |
| abstract |
The invention relates to semiconductor device fabrication and more specifically to a method and material for forming of shallow trench isolation structures in integrated circuits. A silica dielectric film is formed by preparing a composition comprising a silicon containing pre-polymer, optionally water, and optionally a metal-ion-free catalyst selected from the group consisting of onium compounds and nucleophiles. The substrate is then coated with the composition to form a film. The film is then crosslinked to produce a gelled film. The gelled film is then heated at a temperature of from about 750 °C to about 1000 °C for a duration effective to remove substantially all organic moieties and to produce a substantially crack-free silica dielectric film. |
| priorityDate |
2004-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |