| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d802c1402fc20e0369bf17612e694890
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eabe52c1a75fb34b413fbeb9a425e17b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8fd1c081b517e4d7af856f29058a6b98
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a67c8d8283759e5e3caef4d31075e53
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6a916e03e9b9d6e2e9655219cd75abb5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7833 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4958 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate |
2005-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d9fc4ab84e8b569c816935931f1fba2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5e877988ac87d2da69b37b2217727df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9172563e4caae36e0d0ee8ff6ea72868
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65afd7e241f6a7d2a899a5a6ae54f6c9 |
| publicationDate |
2005-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005106938-A1 |
| titleOfInvention |
Method for forming a gate electrode having a metal |
| abstract |
One embodiment forms a gate dielectric layer (18) over a substrate (10) and then selectively deposits a first metal layer (26) over portions of the gate dielectric layer (18) in which a first device type will be formed. A second metal layer (28), different from the first metal layer (26), is formed over exposed portions of the gate dielectric layer (18) in which a second device type will be formed. Each of the first and second device types will have different work functions because each will include a different metal in direct contact with the gate dielectric. In one embodiment, the selective deposition of the first metal layer (26) is performed by ALD and with the use of an inhibitor layer (24) which is selectively formed over the gate dielectric layer (18) such that the first metal layer (26) may be selectively deposited on only those portions of the gate dielectric layer (18) which are not covered by the inhibitor layer (24). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4557879-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009517872-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007165414-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009538542-A |
| priorityDate |
2004-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |