| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c4b839a94ed092f4140bb53b21bf657b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_308f203ea5165e8e942b0e9129d6a41b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a06b069d88a7ee7bdae802534245b4a4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B3-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 |
| filingDate |
2005-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47ca7afaf1aef8ea0e6ad4f6144dc6b0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_db59345cde103ee9c71fcc46c5f0a66e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b95532f70e0a5bc5dddc0d38d7e12d4 |
| publicationDate |
2005-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005104140-A1 |
| titleOfInvention |
Low dielectric constant porous films |
| abstract |
A porous dielectric film for use in electronic devices is disclosed that is formed by removal of soluble nano phase porogens. A silicon based dielectric film having soluble porogens dispersed therein is prepared by chemical vapor deposition (CVD) or by spin on glass (S.O.G.). Examples of preferable porogens include compounds such as germanium oxide (GeO2) and boron oxide (B2O3). Hot water can be used in processing to wet etch the film, thereby removing the porogens and providing the porous dielectric film. The silicon based dielectric film may be a carbon doped silicon oxide in order to further reduce the dielectric constant of the film. Additionally, the porous dielectric film may be treated by an electron beam to enhance the electrical and mechanical properties of the film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7643268-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2468458-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8846522-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/RU-2544646-C2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7866015-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8399349-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7466534-B2 |
| priorityDate |
2004-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |