http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005091301-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_91518a856290833cf23acb8d4e0c895f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-22 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C11-22 |
| filingDate | 2004-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbe45ee5828b5233bf22f46dd51697ba |
| publicationDate | 2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2005091301-A1 |
| titleOfInvention | Ferroelectric memory |
| abstract | In order to charge a pair of ferroelectric capacitors FC1 and FC2 constituting a memory cell MC in read operation, a voltage setting circuit PRE sets the difference between voltages across the ferroelectric capacitors FC1 and FC2 lower than a coersive voltage. A differential sense amplifier SA amplifies the voltage difference between bit lines BL and BLX being produced depending on the difference of charging amount between the ferroelectric capacitors FC1 and FC2. Since the difference between voltages across the ferroelectric capacitors FC1 and FC2 is lower than the coersive voltage, inversion of polarization vector of the ferroelectric capacitors FC1 and FC2 is prevented. Consequently, it is possible to prevent deterioration of a ferroelectric material due to read operation and eliminate restriction on the number of reading times of a ferroelectric memory. |
| priorityDate | 2004-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.