| abstract |
A semiconductor device (28) is supported by a substrate (8) with a smaller lattice constant. A metamorphic buffer (10, 12, 14, 16, 18, 20) provides a transition from the smaller lattice constant of the substrate to the larger lattice constant of the semiconductor device. In one application, the semiconductor device has a lattice constant of between approximately 6.1 and 6.35 angstroms, metamorphic buffer layers include Sb (e.g., AlInSb buffer layers), and the substrate has a smaller lattice constant (e.g., Si, InP or GaAs substrates). |