| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c15a25cb41ff9ccea011ba75f6fabd47
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ca9ae9b27ba4278705bb08df210cc370
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe228c8b0f7327c99f912ac5f68e7f73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7a9bf52646bb9fbc8d732529b6081693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5867383a800eec3ebfa5221ab350881b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate |
2005-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1320a4c00d82dd38a05111fe9db498dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c45df043e40467abb9b585f02af7f265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2915ca520c23682536c222a12d801625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47c9607ec457803dc9186d640a61d474
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d0223186453fe13052d89f062421836 |
| publicationDate |
2005-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005086226-A1 |
| titleOfInvention |
Heat treatment for improving the quality of a taken thin layer |
| abstract |
The invention relates a method for forming a structure (30) comprising a layer (1, 2) taken from a donor wafer (10) which comprises, before removal, a first layer (1) made of a germanium-containing semiconductor material. The inventive method consists (a) in forming a embrittlement area (4) in the thickness of said first germanium-containing layer (1), (b) in bonding the donor wafer (10) to a receiving wafer (20) and (c) in supplying energy for embrittling the donor wafer (10) in the embrittlement area (4). Said invention is characterised in that the stage (a) is carried out by exposing the donor wafer to the co-implantation of at least two different atomic species and the stage (c) is carried out by means of heat treatment at a temperature ranging from 300 to 400 °C for a time ranging from 30 min to 4 hours. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007251172-A |
| priorityDate |
2004-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |