| abstract |
A silicon single crystal grown by the CZ method in which there is no Cu precipitate. There is further provided a silicon wafer produced from the silicon single crystal, which silicon wafer on its surface and in the interior thereof is free of Cu precipitates. Still further, there is provided an apparatus for production of a silicon single crystal according to the CZ method, in which the Cu concentration of a quartz part disposed at a location of 1000°C or higher within a single crystal growing oven is 1 ppb or below while the Cu concentration of a quartz part disposed at a location of below 1000°C within the single crystal growing oven is 10 ppb or below. Furthermore, there is provided a process for producing a silicon single crystal, in which a silicon single crystal is grown by means of the above production apparatus. Thus, there are provided a high-quality high-yield silicon single crystal with crystal defects minimized and silicon wafer, and provided a production apparatus and process therefor. |