| abstract |
A method of cleaning tantalum-containing deposits from a surface of a process chamber component includes immersing the surface of the component in a cleaning solution having a ration of HF to HNO3 of from about 1:8 to about 1:30 by weight. In another version, the cleaning solution has a ration of KOH to H2O2 of from about 6:1 to about 10:1 by moles. In yet another version suitable for cleaning copper surfaces, the cleaning solution includes HF and an oxidizing agent in a molar ratio of HF to the oxidizing agent of at least about 6:1. The tantalum-containing deposits can be removed from the surface substantially without eroding the surface. |