| abstract |
The invention relates to a semiconductor arrangement comprising at least one non-volatile memory cell that is provided with a first electrode which consists of at least two layers. Said semiconductor arrangement further comprises an organic material that forms a bond with the layer of the first electrode, which is in direct contact therewith. The invention also relates to a method for producing said non-volatile memory cell, a semiconductor arrangement comprising a plurality of inventive memory cells, and a method for the production thereof. |