| abstract |
With respect to silicon single crystal substrate PW containing boron, arsenic or phosphorus as a dopant in a concentration of 1×1019/cm3 or more and having its back side furnished with CVD oxide film (1), while retaining the CVD oxide film (1), the oxide film on a major surface of silicon single crystal substrate PW is subjected to wet etching through hydrofluoric acid treatment (step S5). Thereafter, the silicon single crystal substrate PW is baked in hydrogen gas at 950°C or below so as to effect dry etching of natural oxide film on the major surface of silicon single crystal substrate PW (step S7). Further, sub-epitaxial layer (2) is formed at temperature lower than the growth temperature for main epitaxial layer (3) (step S8), and main epitaxial layer (3) is formed on the sub-epitaxial layer (2) at 900 to 1200°C (step S9). |