| abstract |
Disclosed is an organic thin film transistor wherein at least three terminals, namely a gate electrode, a source electrode and a drain electrode, an insulating layer and an organic semiconductor layer are formed on a substrate, and the current between the source and drain is controlled by applying a voltage to the gate electrode. The organic semiconductor layer contains a nitrogen-containing heterocyclic compound wherein a five-membered nitrogen-containing ring is condensed with a five-membered or six-membered ring in the condensed portion. Such an organic thin film has a high response speed and a large on/off ratio. |