| abstract |
There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film (108) on a semiconductor substrate (100) , forming an alumina film (117) on the underlying region, forming a hole (117a) in the alumina film (117) , filling the hole (117a) with a bottom electrode film (118, 119) , forming a dielectric film (121) on the bottom electrode film (118, 119) , and forming a top electrode film (122) on the dielectric film (121) . |