| abstract |
A first polishing composition is used in chemical mechanical polishing for removing a part of a portion of a conductive film (15) which is outside of a trench (13). A second polishing composition is used in chemical mechanical polishing for removing the rest of the portion of the conductive film which is outside of the trench and a part of a barrier film (14) which is outside of the trench. The first polishing composition contains a specific surfactant, a silicon oxide, a carboxylic acid, an anticorrosive, an oxidant and water. The second polishing composition contains a colloidal silica, an acid, an anticorrosive, a completely saponified polyvinyl alcohol and water. |