http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005030439-A1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fda14fe0233e0cc85b78eaaeea211360
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-321
filingDate 2004-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a009c2256037286aeabdda2a55c9550
publicationDate 2005-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2005030439-A1
titleOfInvention Polishing cloth, polishing cloth processing method, and substrate manufacturing method using same
abstract A polishing cloth for polishing a semiconductor substrate is characterized in that at least grooves having a radial pattern are formed in the surface of the cloth, the grooves are such that the ratio (the average of the total volume of the grooves right under the substrate/the area of the substrate) is 0.06 to 0.23, the depth of the grooves nearer to the center than the substrate is less than the depth of the grooves right under the substrate, the intersection of the grooves at the center of the radial pattern of the grooves is not present right under the substrate. Its processing method and a substrate manufacturing method using the same are also disclosed. A necessary amount of abrasive can thus be fed to the central part of the substrate during polishing of the substrate, and therefore the substrate can be polished with high planarity. Further separation, twist, burrs are not caused, thereby not scratching the surface of the semiconductor substrate.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006289605-A
priorityDate 2003-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001212752-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003062748-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002343749-A
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID449831252
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID21584072

Total number of triples: 27.