http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005029567-A1

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filingDate 2004-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91b986a6dc9b9cdc16ad3f101794d4c2
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publicationDate 2005-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2005029567-A1
titleOfInvention Method of forming dielectric layers with low dielectric constants
abstract A method (100) of depositing a dielectric material includes providing (101) a substrate with at least one layer over the substrate. The method further includes pre-wetting (102) a top surface of a top layer with a substance, spin coating (103) the solution and forming (104) the dielectric material. The dielectric material is illustratively SiO2 that is relatively porous, and has a relatively low dielectric constant. The pre-wetting results in a reduction in processing costs due to a reduction in lost solution. Moreover, the dielectric layer (209) has an improved thickness uniformity.
priorityDate 2003-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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