http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005015653-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a96783de70ad5c073e983956b69c5ab1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c4483b7dcfa169d7ea8a61300461c0b4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_df79db94ce071a0a79813d1b4b9d3102 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C2213-17 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-468 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0014 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C13-0016 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate | 2004-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81acab65b0b96bca0bed3b8314d71bff http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a35a9955501111a17aa585e800b3786a |
| publicationDate | 2005-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2005015653-A1 |
| titleOfInvention | Field effect transistor |
| abstract | The present invention relates to field effect transistor comprising source and drain electrodes separated by a semiconductor body region, and a gate electrode separated from said semiconductor body region by a gate insulator region, wherein the gate insulator region comprises a non-crystalline, preferably solutionprocessed, organic like material. Furthermore, the present invention also relates to a method of fabricating a field effect transistor comprising the steps of- a) forming a gate electrode; b) forming a gate insulator region; c) forming a semiconductor body region separated from said gate electrode by said gate insulator region; and d) forming source and drain electrodes separated from each other by said semiconductor body region, such that the gate insulator region comprises a solution processed non crystalline organic like material. A transistor in accordance with an embodiment of the present invention can be used in memory devices to store one bit per one component and the memory is permanent but re-writeable. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10679688-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9812449-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2014199144-A1 |
| priorityDate | 2003-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.